Mesh generation algorithms for three-dimensional semiconductor process simulation
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Mesh generation algorithms for three-dimensional semiconductor process simulation by Luis Villablanca

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Published by Hartung-Gorre in Konstanz .
Written in English

Subjects:

  • Semiconductors -- Design and construction -- Computer simulation.,
  • Finite element method.

Book details:

Edition Notes

Includes bibliographical references (p. 97-102).

StatementLuis Villablanca.
SeriesSeries in microelectronics ;, v. 97
Classifications
LC ClassificationsTK7871.85 .V543 2000
The Physical Object
Pagination103 p. :
Number of Pages103
ID Numbers
Open LibraryOL6885101M
ISBN 103896495836
LC Control Number00465007

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Generation of a three-dimensional dual mesh appropriate for the use of a co-volume scheme is a much more difficult issue. Here, an approach is being developed where the . 2(d) shows a result of mesh generation for the NURBS surface with nodes, triangles, and mean quality factor [7]. The calculation time is only second on Sun Ultra 10 workstation. We have applied our mesh generation algorithm to the cell-based geometry representation for surface smoothing and mesh generation. Fig. The three-dimensional simulation of fabrication processes for the semiconductor industry re- quires a very robust mesh generation algorithm together with a reliable update of the geometry. While the process description of a single process step remains simple: dry or wet etch with a. An Algorithm for Three-Dimensional Mesh Generation for Arbitrary Regions with Cracks J. B. Cavalcante Neto 1, P. A. Wawrzynek2, M. T. M. Carvalho, L. F. Martha1 and A. R. Ingraffea2 1Department of Civil Engineering and Computer Graphics Technology Group (Tecgraf), Pontifical Catholic University of Rio de.

methods for mesh generation, and mesh “clean-up” methods for improving an existing mesh. Unfortunately, nearly all the algorithms developed during this period are fragile, and produce unsatisfying meshes when confronted by complex domain geometries and stringent demands on element Size: 1MB. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation. 4 Three-Dimensional Delaunay Refinement Algorithms 85 of mesh generation has proven to be more challenging than the entire remainder of the simulation process. 1. 2 Jonathan Richard Shewchuk Figure ical mesh generation algorithms are often based upon the idealized assumption that the input geometry is.   Modelling of Silicon Interstitial Surface Recombination Velocity at Non-Oxidizing Interfaces.- Efficient Hybrid Solution of Sparse Linear Systems.- Mesh Generation for 3D Process Simulation and the Moving Boundary Problem.- Three-Dimensional Grid Adaption Using a Mixed-Element Decomposition Method

5. Concept of three-dimensional mesh generation. The concept of generation of intermediate nodes in a one-dimensional line segment can be extended to two as well as three-dimensional structures. Assemblage of stiffness matrix is based on the fact that each element is a Cited by: 5. Though only one type of element is examined in the cases of two- and three- dimensional mesh generation, a variety of elements can be incorporated, conveniently depending on the user's requirement. REFERENCES 1. O. C. Zienkiewicz and D. V. Phillips, An automatic mesh generation scheme for plane and curved surfaces by 'isoparametric' coordinates Cited by: 4. The activation of volume mesh, under mesh generation option provides three dimensional meshes for the specified solver format. After completion of mesh generation in different parts, the assembled mesh has been imported in flow solver is shown in the Fig(a) with grid interfaces between parts so that no artificial walls present in the volume Cited by: 2. Research in Mesh Generation. Argentina: Research at Computational Mechanics Lab, Centro Atomico Bariloche, is on algorithms for the generation and optimisation of tetrahedral element meshes and on computational geometry applications to fem pre/post-processing. Tet> Australia: Scott Sloan, Department of Civil Engineering & Surveying, University of Newcastle, works on .